Generally, semiconductor devices include a plurality of circuits that form an integrated circuit including chips (e.g., chip back end of line, or “BEOL”), thin film packages and printed circuit boards. The present invention also provides a method of fabricating an interconnect structure in which wall portions of the organosilicate glass (OSG) dielectric are not damaged during processing. The terms “ultra low k” or “ULK” refer to an organosilicate glass having a dielectric constant of less than 3.0. The present invention generally relates to integrated circuits (ICs), and more particularly to interconnect structures, including multilevel interconnect structures, in which advanced dual damascene processing enables target ultra low k (ULK) interconnect performance and enhanced mechanical integrity (reliability).
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